The following figure shows a vast range of bipolar transistors and their detailed specifications. Bipolar transistors work with four distinctive areas of operation, characterized by BJT junction biases. The base—emitter junction is forward biased and the base—collector junction is reverse biased. In such a scenario, the collector—emitter current is roughly proportionate to the base current, but most of the times greater, for small-scale base current changes. By reversing the biasing factors of the forward-active region, a bipolar transistor switches into reverse-active form. In this setting, the emitter and collector areas swap their tasks.
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